| PART |
Description |
Maker |
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储
RESISTOR 62 OHM .5W CARB COMP
4 Mbit (512K x8) SuperFlash EEPROM 4兆位（为512k × 8）超快闪EEPROM
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
(SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| CY14V104NA-BA45XI |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
Cypress
|
| CY14E104L-BA45XCT CY14E104N-BA45XCT CY14E104L-ZS25 |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
http://
Cypress Semiconductor
|
| CY14B104LA-ZS20XI CY14B104LA-BA45XC CY14B104NA-BA4 |
4 Mbit (512K x 8/256K x 16) nvSRAM
|
http://
Cypress Semiconductor
|
| CY7C1362C-166AJXC CY7C1362C-166AJXI CY7C1362C-166A |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
Cypress Semiconductor
|
| CY7C1361C-133AXI CY7C1363C-133BZI CY7C1361C-100AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1363C-100AJXC CY7C1363C-100AJXI CY7C1363C-100A |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
